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Beilstein J. Nanotechnol. 2019, 10, 1833–1843, doi:10.3762/bjnano.10.178
Figure 1: Three configurations of a piezoelectric p–n junction: 1) R-C stands for the piezoelectric p–n junct...
Figure 2: Quasi-electrostatic analysis of a mechanically loaded piezoelectric p–n junction under a bias volta...
Figure 3: Comparison of I–V characteristics obtained from our model and the Shockley model under (a) forward-...
Figure 4: (a) I–V characteristics of a piezoelectric p–n junction under different loadings; (b) NEMC distribu...
Figure 5: (a) Current density as a function of applied tensile stress under two constant forward-bias voltage...
Figure 6: (a) I–V characteristics of a piezoelectric p–n junction under reverse-bias voltages and different a...
Figure 7: Positive current density under a reverse-bias voltage. (a) Current density under different applied ...
Figure 8: I–V characteristics for different loading locations under constant applied stress: (a) σ = −10 MPa;...
Figure 9: I–V characteristics of a CdS p–n junction with different doping concentrations exposed to mechanica...
Beilstein J. Nanotechnol. 2018, 9, 1917–1925, doi:10.3762/bjnano.9.183
Figure 1: A circular ZNW cantilever exposed to a force P at the free end.
Figure 2: Nonlinearity as a result of carrier drift for n0 = 1.0·1023m−3 as a function of the end force P. a)...
Figure 3: Carrier distribution in the ZNW cross section for P = 50, 60, 70 and 80 nN.
Figure 4: Distribution of electric potential in the ZNW cross section for P = 50, 60, 70 and 80 nN.
Figure 5: Effect of initial carrier concentration n0 on the electric field E2 along the x2-axis.
Figure 6: Output voltage Vout between the two endpoints of the cross section of a bent ZNW as a function of t...
Figure 7: (a) Boundary electric potential and (b) boundary electric displacement Dr at Ω for different end f...
Figure 8: W as a function of the electrode configuration for different end forces.
Figure 9: W as a function of the electrode configuration for different initial carrier concentrations.